TID Sensitivity Assessment of Quadrature LC-Tank VCOs Implemented in 65-nm CMOS Technology

نویسندگان

چکیده

This article presents a comprehensive assessment of the ionizing radiation induced effects on performance quadrature phase LC-tank based voltage-controlled-oscillators (VCOs). Two different VCOs (QVCOs) that are capable generating frequencies in range 2.5 GHz to 2.9 implemented commercial 65 nm bulk CMOS technology target for harsh environments like space applications and high-energy physics (HEP) experiments. Each QVCOs consumes 13 mW power from 1.2 V supply. The architectures popular implementation two types QVCOs: parallel-coupled QVCO (PQVCO) super-harmonic coupled (SQVCO). various metrics (oscillation frequency, phase, noise, frequency tuning range, consumption) evaluated with respect Total Dose (TID) up level approximately 100 Mrad (SiO2) through X-ray irradiation. During irradiation, electrical characterization samples prototype performed under biased condition at room temperature. Before (PQVCO SQVCO) achieve noise equal −115 dBc/Hz −119 1 MHz offset, resulting figure-of-merit (FoM) −172.2 −176.4 respectively. test-setup TID experiment is discussed results obtained statistically analyzed this perform comparative study evaluate effectiveness hardened by design techniques (RHBDs) employed implementations. Post-irradiation, overall variations oscillators less than 1% change (TR) 5% as observed tested samples.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Comparison of LC and Ring VCOs for PLLs in a 90 nm Digital CMOS Process

Abstract – This paper gives a performance, power and area comparison of LC vs. Ring VCOs for application to PLL designs in a standard 90 nm digital CMOS process. We develop an analytical framework for determining the best match for a high-speed clock synthesizer design based on the constraints of the application. A type-II PLL is utilized in this study because of its capability for allowing ind...

متن کامل

Integration of NEMS resonators in a 65 nm CMOS technology

In this work we study the feasibility to obtain the smallest CMOS-NEMS resonator using a sub-100 nm CMOS technology. The NEMS resonators are defined in a top-down approach using the available layers of the 65 nm CMOS technology from ST Microelectronics. A combination of dry and wet etching is developed in order to release the NEMS in an in-house post-CMOS process. Two different NEMS resonators ...

متن کامل

A 56-GHz LC-Tank VCO With 17% Tuning Range in 65-nm Bulk CMOS for Wireless HDMI

A voltage-controlled oscillator (VCO) with a central frequency of 56 GHz and a 17% tuning range is presented. The oscillation frequency is tuned both by an analog input and by a 3-bit digital control bus using the same type of differential varactors. It achieves a record figure of merit, considering tuning range of 186.8 dBc/Hz and is able to address the full wireless high-definition multimedia...

متن کامل

Tunable Balun Low-Noise Amplifier in 65 nm CMOS Technology

The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristic from 4.7 GHz up to 5.6 GHz and a continuously tunable ...

متن کامل

Design of a Very Low-power, Low-cost 60 GHz Receiver Front-End Implemented in 65 nm CMOS Technology

The research on the design of receiver front-ends for very high data-rate communication in the 60 GHz band in nanoscale CMOS technologies is going on for some time now. While a multitude of 60 GHz front-ends have been published in recent years, they are not consequently optimized for low power consumption. Thus, these front-ends dissipate too much power for battery-powered applications like han...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Electronics

سال: 2022

ISSN: ['2079-9292']

DOI: https://doi.org/10.3390/electronics11091399